| 界面改性对SiCp/Cu复合材料导热性能的影响*(复合材料专题) |
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| 引用本文： | 刘猛,白书欣,李顺,赵恂,熊德赣.界面改性对SiCp/Cu复合材料导热性能的影响*(复合材料专题)[J].国防科技大学学报,2016,38(1). |
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| 作者姓名： | 刘猛 白书欣 李顺 赵恂 熊德赣 |
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| 作者单位： | 国防科技大学航天科学与工程学院,国防科技大学航天科学与工程学院,国防科学技术大学 航天科学与工程学院,国防科学技术大学 航天科学与工程学院,国防科学技术大学 航天科学与工程学院 |
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| 摘 要： | 采用磁控溅射法结合结晶化热处理工艺在碳化硅（Silicon Carbide, SiC）颗粒表面成功制备了金属钼（Molybdenum, Mo）涂层，分析了Mo涂层的成分和形貌；然后采用热压烧结工艺制备了SiCp/Cu复合材料，重点对比分析了Mo界面阻挡层厚度对复合材料导热性能的影响。结果表明：磁控溅射法能够在SiC颗粒表面沉积得到Mo 涂层，随溅射时间的延长Mo涂层的厚度增加、粗糙度增大，且磁控溅射后SiC颗粒表面直接得到的Mo涂层为非晶态，结晶化热处理后，变为致密平整的晶态Mo涂层。磁控溅射时间即Mo涂层厚度对复合材料导热性能影响明显，随磁控溅射时间的增加，复合材料的热导率呈现先增后减趋势，采用磁控溅射9h镀Mo改性并经过800℃结晶化热处理的SiC复合粉体在850℃下热压烧结制备的SiCp/Cu复合材料（VSiC=50%），其热导率达到了最高值274.056W/(m·K)。
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| 关 键 词： | SiCp/Cu复合材料 表面改性 磁控溅射 热压烧结 热导率 |
| 收稿时间： | 9/7/2015 12:00:00 AM |
The study on the thermo-physical property of the SiCp/Cu composite fabricated by hot pressing method |
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| Abstract: | The molybdenum coating was successfully deposited on the surface of silicon carbide by direct current magnetron sputtering method and the crystallized heat-treatment, its surface morphology and chemical composition were analyzed. Then the SiCp/Cu composite was prepared by vacuum hot-pressing sintering, and the effects of the interfacial layer thickness on the thermal conductivity were studied in detail. The results are as fellows, molybdenum coating can be successfully deposited on the surface of silicon carbide by direct current magnetron sputtering method, with the sputter time postponed the roughness and the thickness of the film was enhanced, furthermore the molybdenum on the surface was in amorphous state. After crystallized heat treatment, the molybdenum coating came to be densification crystalline state. The sputtering time affects the thickness of the Mo coating and the thermal conductivity of SiCp/Cu obviously, with the time postponed the thickness of the Mo coating increased, and the thermal conductivity shows the change trend of firstly increase and then decreased. The thermal conductivity of the SiCp/Cu composite fabricated by the 9h Mo coated SiC powders can reached 274.056W/(m·K) when the volume fraction of SiC is about 50%. |
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| Keywords: | SiCp/Cu composite surface modification magnetron sputtering hot pressing thermal conductivity |
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