首页 | 官方网站   微博 | 高级检索  
     

宇宙高能质子致单粒子翻转率的计算
引用本文:王同权,戴宏毅,沈永平,张若棋,肖亚斌.宇宙高能质子致单粒子翻转率的计算[J].国防科技大学学报,2002,24(2):11-13.
作者姓名:王同权  戴宏毅  沈永平  张若棋  肖亚斌
作者单位:国防科技大学理学院,湖南,长沙,410073
基金项目:国家部委基金项目资助 (98J11 2 2 KG0 12 6)
摘    要:通过简化半导体器件灵敏单元 ,计算得到了宇宙高能质子在器件灵敏单元内产生的能量沉积。然后利用地面重离子实验单粒子翻转数据得到的Weibull函数 ,计算了CRRES卫星轨道、 33mm铝屏蔽壳体内几种器件的单粒子翻转率 ,并与已有结果进行了比较说明。

关 键 词:高能质子  空间辐射  单粒子翻转  卫星
文章编号:1001-2486(2002)02-0011-03
收稿时间:2001/4/24 0:00:00
修稿时间:2001年4月24日

Calculation of Cosmic High Energy Proton Induced Single Event Upset Rate
WANG Tongquan,DAI Hongyi,SHEN Yongping,ZHANG Ruoqi and XIAO Yabin.Calculation of Cosmic High Energy Proton Induced Single Event Upset Rate[J].Journal of National University of Defense Technology,2002,24(2):11-13.
Authors:WANG Tongquan  DAI Hongyi  SHEN Yongping  ZHANG Ruoqi and XIAO Yabin
Affiliation:College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China
Abstract:By simplifying the sensible volume of semiconductor devices, the energy deposited by the cosmic highenergy protons in the sensible volume of semiconductor devices is calculated. Then by using the Weibull function derived by the ground heavy ion SEU experiments, the SEU rates of several devices by the shielding of 33 mm Aluminum in the CRRRES satellite orbit are calculated. The results are compared and analyzed.
Keywords:high energy proton  space radiation  SEU(single event upset)  satellite
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《国防科技大学学报》浏览原始摘要信息
点击此处可从《国防科技大学学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号