| 高能离子在材料中输运的蒙特卡罗模拟 |
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| 引用本文： | 王同权,张若棋,沈永平,戴宏毅,张文勇,肖亚斌.高能离子在材料中输运的蒙特卡罗模拟[J].国防科技大学学报,2001,23(1):105-109. |
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| 作者姓名： | 王同权 张若棋 沈永平 戴宏毅 张文勇 肖亚斌 |
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| 作者单位： | 国防科技大学理学院,湖南 长沙 410073 |
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| 基金项目： | 国家部委基金资助项目! (98J11.2 .2 .KG0 12 6 ) |
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| 摘 要： | 利用蒙特卡罗方法对高能离子在材料中的输运进行了计算机模拟研究 ,入射高能离子与靶材料的作用近似为核散射和电子作用两个独立的部分 ,核散射能量损失采用经典两体碰撞近似 ,通过对碰撞参数的随机抽样得到散射角 ,电子能量损失高能时采用Bethe-Bloch公式 ,低能时采用Lindhard -Scharff公式 ,中能时采用插值公式。最后对高能铁离子入射于铝、硅材料的输运进行了模拟计算 ,给出了模拟结果并进行了分析。
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| 关 键 词： | 蒙特卡罗方法 高能离子 辐射效应 计算机模拟 |
| 文章编号： | 1001-2486 (2001) 01-0105-05 |
| 收稿时间： | 2000/9/25 0:00:00 |
| 修稿时间： | 2000年9月25日 |
The Monte Carlo Simulation of the High Energy Ions Transport in Materials |
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| WANG Tongquan,ZHANG Ruoqi,SHEN Yongpin,DAI Hongyi,ZHANG Wenyong and XIAO Yabin.The Monte Carlo Simulation of the High Energy Ions Transport in Materials[J].Journal of National University of Defense Technology,2001,23(1):105-109. |
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| Authors: | WANG Tongquan ZHANG Ruoqi SHEN Yongpin DAI Hongyi ZHANG Wenyong and XIAO Yabin |
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| Affiliation: | College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China;College of Science, National Univ. of Defense Technology, Changsha 410073, China |
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| Abstract: | This paper deals with the Monte Carlo Simulation of the transport of high energy ions in materials, The incident high energy ions interact with the target material in a way is approximate to the two unrelated mechanisms, nuclear scattering and electronic process. The energy loss of incident ions due to nuclear scattering is calculated using binary collision approximation.The impact parameter is sampled and scattering angle can be derived. The electronic energy loss of incident ions for the high energy is calculated by Bethe-Bloch formulation. Lindhard-Scharff formulation is used for low energy and the interpolation formulation is used for the medium energy region. Finally, the computer simulation of high energy irons transport in aluminum and silicon is made, and the results are presented and analyzed. |
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| Keywords: | Monte Carlo simulation methods high energy ions radiation effects computer simulation |
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