首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1篇
  免费   2篇
  2019年   1篇
  2014年   2篇
排序方式: 共有3条查询结果,搜索用时 16 毫秒
1
1.
《防务技术》2019,15(3):306-312
A sol-gel freezing-drying method was utilized to prepare energetic nanocomposites based on 2, 4, 6, 8, 10, 12-hexanitro-2, 4, 6, 8, 10, 12-hexaazaisowurtzitane (CL-20) with 3, 3-Bis (azidomethyl) oxetane-tetrahydrofuran copolymer (BAMO-THF) as energetic gel matrix. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman, Fourier-transform infrared spectroscopy (FT-IR) and differential thermal analyser (DTA) were utilized to characterize the structure and property of the resultant energetic nanocomposites. Compared with raw CL-20, the average particle sizes of CL-20 in CL-20/BAMO-THF energetic nanocomposites were decreased to nano scale and the morphologies of CL-20 were also changed from prismatic to spherical. FT-IR detection revealed that CL-20 particles were recrystallized in BAMO-THF gel matrix during the freezing-drying process. The thermal decomposition behaviors of the energetic nanocomposites were investigated as well. The thermolysis process of CL-20/BAMO-THF nanocomposites was enhanced and the activation energy was lower compared with that of raw CL-20, indicating that CL-20/BAMO-THF nanocomposites showed high thermolysis activity. The impact sensitivity tests indicated that CL-20/BAMO-THF energetic nanocomposites presented low sensitivity performance.  相似文献   
2.
以聚碳硅烷和锑改性聚硅烷为先驱体,利用先驱体转化SiC材料的富余自由碳高温石墨化的微观结构演变特点,采用热压烧结、先驱体浸渍—裂解法以及退火工艺制备出先驱体转化SiC纳米复合材料。采用SEM、TEM、XRD和Raman等测试手段表征和分析了相组成和微观结构,讨论了样品的热导率、电导率和塞贝克系数等热电参数随温度变化关系。研究表明,所得致密SiC纳米复合材料为n型热电材料。由于纳米石墨的作用,材料热导率抑制在4–8W/(m?K)范围。1600°C退火处理能够降低热导率,同时提高电导率和塞贝克系数绝对值,使先驱体转化法得到的SiC纳米复合材料无量纲热电优值ZT达到0.0028(650°C),高于其他已报道的致密SiC/C复合材料和纳米复合材料体系。  相似文献   
3.
以聚碳硅烷和锑改性聚硅烷为先驱体,利用先驱体转化Si C材料的富余自由碳高温石墨化的微观结构演变特点,采用热压烧结、先驱体浸渍-裂解法以及退火工艺制备出先驱体转化Si C纳米复合材料。采用SEM、TEM、XRD和Raman等测试手段表征和分析了相组成和微观结构,讨论了样品的热导率、电导率和塞贝克系数等热电参数随温度变化关系。研究表明,所得致密Si C纳米复合材料为n型热电材料。由于纳米石墨的作用,材料热导率抑制在4~8W/(m·K)范围。1600℃退火处理能够降低热导率,同时提高电导率和塞贝克系数绝对值,使先驱体转化法得到的Si C纳米复合材料无量纲热电优值ZT达到0.0028(650℃),高于其他已报道的致密Si C/C复合材料和纳米复合材料体系。  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号