| 等离子体氮化SiO_2膜的电学性质 |
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| 引用本文： | 蔡跃明.等离子体氮化SiO_2膜的电学性质[J].军事通信技术,1990(1). |
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| 作者姓名： | 蔡跃明 |
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| 摘 要： | 本文研究了等离子体氮化 SiO_2膜的电学性质,在低温下获得了性能优良的介质膜。
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| 关 键 词： | SiO_2 等离子体氮化 MOS 结构 电子陷阱 |
Electrical Characteristics of Plasma Nitrided SiO_2 Films |
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| Cai Yaoming.Electrical Characteristics of Plasma Nitrided SiO_2 Films[J].Journal of Military Communications Technology,1990(1). |
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| Authors: | Cai Yaoming |
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| Institution: | Cai Yaoming |
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| Abstract: | The electrical characteristics of plasma nitrided SiO_2 is investigated in this paper The dielectric films with superior properties have been obtained at low temperature. |
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| Keywords: | SiO_2 Plasma Nitridation Electron Trap MOS Strncture |
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