| 一款0.18μm CMOS辐射加固差分压控振荡器 |
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| 引用本文： | 赵振宇,郭斌,张民选,刘衡竹.一款0.18μm CMOS辐射加固差分压控振荡器[J].国防科技大学学报,2009,31(6):12-17. |
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| 作者姓名： | 赵振宇 郭斌 张民选 刘衡竹 |
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| 作者单位： | 国防科技大学计算机学院,湖南,长沙,410073 |
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| 基金项目： | 国家自然科学基金，教育部高等学校博士学科点专项科研基金，教育部高性能微处理器技术创新团队资助项目 |
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| 摘 要： | 基于对称负载压控振荡器(VCO)的单粒子瞬变(SET)失效机理,应用设计加固(RHBD)技术分别改进了偏置电路和环形振荡器,设计和实现了一款0.18μm CMOS辐射加固差分VCO.模拟结果表明:加固VCO的SET敏感性大幅降低,同时还降低了抖动对于电源噪声的敏感性.虽然电路结构变化会导致频率下降,但可以通过调整电路尺寸而解决.此外,加固VCO面积开销有所降低,优于其他加固方法.
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| 关 键 词： | 单粒子效应 单粒子瞬变 压控振荡器 |
| 收稿时间： | 7/3/2009 12:00:00 AM |
A Radiation-hardened-by-design Differential Voltage-controlled Oscillator Implemented in 0.18μm CMOS Process |
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| ZHAO Zhenyu,GUO Bin,ZHANG Minxuan and LIU Hengzhu.A Radiation-hardened-by-design Differential Voltage-controlled Oscillator Implemented in 0.18μm CMOS Process[J].Journal of National University of Defense Technology,2009,31(6):12-17. |
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| Authors: | ZHAO Zhenyu GUO Bin ZHANG Minxuan and LIU Hengzhu |
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| Institution: | ZHAO Zhen-yu,GUO Bin,ZHANG Min-xuan,LIU Heng-zhu (College of Computer,National Univ.of Defense Technology,Changsha 410073,China) |
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| Abstract: | Applying the radiation-hardened-by-design (RHBD) technique to improve the bias generator and the ring oscillator of the differential voltage-controlled oscillator (VCO) with symmetrical loads, a single-event transient (SET) hardened VCO was designed and implemented in 0.18μm CMOS process based on the failure mechanisms. Simulation results indicate that the single-event susceptibility of the VCO is significantly reduced. Simultaneously, it also reduces the jitter sensitivity to supply noise. This new VCO topology results in a decrease in the frequency, but it can be figured out by adjusting the sizes of the delay buffer. Furthermore, the radiation hardened VCO leads to a decreased area requirement. |
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| Keywords: | RHBD single-event effects single-event transients voltage-controlled oscillators RHBD(Radiation-hardened-by-design) |
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