| 基于加速寿命试验的晶体管静电放电潜在性失效的研究 |
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| 引用本文： | 胡有志,武占成,杨洁,原青云.基于加速寿命试验的晶体管静电放电潜在性失效的研究[J].军械工程学院学报,2011(3):20-23. |
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| 作者姓名： | 胡有志 武占成 杨洁 原青云 |
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| 作者单位： | 军械工程学院静电与电磁防护研究所; |
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| 基金项目： | 国家自然科学基金资助项目(60871066) |
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| 摘 要： | 对高频小功率硅双极结型晶体管2SC3356进行静电放电试验,并利用加速寿命试验原理对两组器件进行加速寿命试验。采用Arrhenius模型对试验结果进行计算分析,发现低于损伤阈值的ESD注入可以使器件的寿命缩短,得出ESD可以在高频小功率硅双极结型晶体管内部造成潜在性失效,使得器件寿命缩短。
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| 关 键 词： | ESD 潜在性失效 加速寿命试验 |
A Study on ESD Latent Failure of BJT Based on Acceleration Life Test |
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| HU You-zhi,WU Zhan-cheng,YANG Jie,YUAN Qing-yun.A Study on ESD Latent Failure of BJT Based on Acceleration Life Test[J].Journal of Ordnance Engineering College,2011(3):20-23. |
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| Authors: | HU You-zhi WU Zhan-cheng YANG Jie YUAN Qing-yun |
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| Institution: | HU You-zhi,WU Zhan-cheng,YANG Jie,YUAN Qing-yun(Institute of Electrostatic and Electromagnetic Protection,Ordnance Engineering College,Shijiazhuang 050003,China) |
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| Abstract: | The high-frequency low-power silicon bipolar junction transistors 2SC3356 is tested on ESD,and the two groups of devices are given the acceleration life test.The result is analyzed and calculated in the arrhenius model.It is found that the life of the device becomes shorter while ESD voltage which is lower than the threshold is injected.ESD can cause the latent failure in the high-frequency low-power silicon bipolar junction transistors,and the life of the BJT becomes shorter. |
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| Keywords: | ESD latent failure acceleration life test |
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