| 集成电路ESD注入损伤效应及注入电压与能量间的关系 |
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| 引用本文： | 谭志良,刘尚合,林永涛,刘存礼,国海广,杨洁.集成电路ESD注入损伤效应及注入电压与能量间的关系[J].军械工程学院学报,2005,17(3):8-11. |
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| 作者姓名： | 谭志良 刘尚合 林永涛 刘存礼 国海广 杨洁 |
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| 作者单位： | 军械工程学院静电与电磁防护研究所 河北石家庄050003
(谭志良，刘尚合，林永涛，刘存礼，国海广)，军械工程学院静电与电磁防护研究所 河北石家庄050003(杨洁) |
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| 摘 要： | 利用静电放电(ESD)模拟器对集成电路芯片进行电压注入损伤效应实验,通过存贮示波器记录的波形进行乘法和积分运算,得到对应注入电压下芯片上吸收的平均峰值功率和能量。对放电电压与平均峰值能量作散点图,采用曲线拟合的方法对离散点进行拟合,针对该曲线拟合的方法进行了分析,最终建立了ESD注入电压与平均峰值能量之间的数学模型。
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| 关 键 词： | 静电放电 集成电路 注入电压 拟合曲线 |
| 文章编号： | 1008-2956(2005)03-0008-04 |
| 修稿时间： | 2005年3月29日 |
ESD Injection Damage Effects of Integrated Circuits and its Relationship between the Injected Voltage and Energy |
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| TAN Zhi-liang,LIU Shang-he,LIN Yong-tao,LIU Cun-li,GUO Hai-guang,YANG Jie.ESD Injection Damage Effects of Integrated Circuits and its Relationship between the Injected Voltage and Energy[J].Journal of Ordnance Engineering College,2005,17(3):8-11. |
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| Authors: | TAN Zhi-liang LIU Shang-he LIN Yong-tao LIU Cun-li GUO Hai-guang YANG Jie |
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| Abstract: | The damage effects of integrated circuits(ICs),with voltage injecting,have been carried out by using electrostatic discharge (ESD) simulator.The response waveforms are recorded and their multiplication and division arithmetic are performed through storage oscilloscope.Then the average peak power and energy absorbed on IC chips are obtained.After drawing the injecting voltage-average peak energy scattering dots curves,the scattering dots have been imitated together by adopting curve imitation method.Based on analysis of curve imitation method,the mathematical model between ESD injecting voltage and average peak energy has been built up. |
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| Keywords: | ESD integrated circuit injecting voltage imitation curve |
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