| 纳米金刚石磨料磁流变抛光材料去除机理与工艺研究 |
| |
| 引用本文： | 石峰,戴一帆,彭小强,康念辉,刘志军.纳米金刚石磨料磁流变抛光材料去除机理与工艺研究[J].国防科技大学学报,2009,31(4):25-30. |
| |
| 作者姓名： | 石峰 戴一帆 彭小强 康念辉 刘志军 |
| |
| 作者单位： | 国防科技大学,机电工程与自动化学院,湖南,长沙,410073 |
| |
| 基金项目： | 国家自然科学基金资助项目，国家部委基金资助项目 |
| |
| 摘 要： | 理论分析与实验验证表明,纳米金刚石磨料磁流变抛光材料去除机理是塑性剪切去除.在KDMRF-1000F磁流变抛光机床上进行工艺实验,研究抛光轮与工件表面的间隙、抛光轮转速、磁场强度对峰值去除效率和表面粗糙度的影响.工艺实验表明,去除函数具有良好的稳定性和重复性,2.5h以内峰值去除效率稳定在±0.3%以内,体积去除效率稳定在±0.5%以内.直径202mm(有效口径95%)的HIP SiC平面镜采用子孔径拼接测量方法,经过磁流变粗抛(30h)和精抛(9h)后,面形误差PV值0.13μm,RMS值0.012μm,表面粗糙度RMS值2.439nm.
|
| 关 键 词： | 磁流变抛光 去除机理 纳米金刚石 工艺 |
| 收稿时间： | 2009/5/10 0:00:00 |
Study on the Mechanism and Arts of Magnetorheological Finishing (MRF) by Nano-sized Diamond Abrasives |
| |
| SHI Feng,DAI Yifan,PENG Xiaoqiang,KANG Nianhui and LIU Zhijun.Study on the Mechanism and Arts of Magnetorheological Finishing (MRF) by Nano-sized Diamond Abrasives[J].Journal of National University of Defense Technology,2009,31(4):25-30. |
| |
| Authors: | SHI Feng DAI Yifan PENG Xiaoqiang KANG Nianhui and LIU Zhijun |
| |
| Institution: | College of Mechatronics Engineering and Automation, National Univ. of Defense Technology, Changsha 410073, China;College of Mechatronics Engineering and Automation, National Univ. of Defense Technology, Changsha 410073, China;College of Mechatronics Engineering and Automation, National Univ. of Defense Technology, Changsha 410073, China;College of Mechatronics Engineering and Automation, National Univ. of Defense Technology, Changsha 410073, China;College of Mechatronics Engineering and Automation, National Univ. of Defense Technology, Changsha 410073, China |
| |
| Abstract: | Material removal mechanism in MRF process by nano-sized diamond abrasives is proved to be a plastic shear removal. Process experiments showed the relationship between polishing parameters (rotation speed, gap between polishing wheel and work piece, and intensity of magnetic field) and peak removal rate or surface roughness. Polishing spot is proved to be stable and repeatable. Within 2.5h, the change of peak removal rate is below ±0.3% and the change of volume removal rate is below ±0.5%. One HIP SiC flat (202mm in diameter) is polished with KDMRF-1000F polishing machine and KDMRW-3 water-based MR fluids. After rough polish (30h) and finishing polish (9h), its surface form accuracy peak-to-valley (PV) is 0.13um, root-mean-square (RMS) is 0.012um and roughness RMS is 2.439nm. |
| |
| Keywords: | |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《国防科技大学学报》浏览原始摘要信息 |
| 点击此处可从《国防科技大学学报》下载免费的PDF全文 |
|
