| 泰氟隆烧蚀产物对电子密度的影响 |
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| 引用本文： | 石于中,王毛彦,尹乐,陈伟芳.泰氟隆烧蚀产物对电子密度的影响[J].国防科技大学学报,2004,26(6):30-33. |
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| 作者姓名： | 石于中 王毛彦 尹乐 陈伟芳 |
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| 作者单位： | 国防科技大学航天与材料工程学院,湖南,长沙,410073;国防科技大学航天与材料工程学院,湖南,长沙,410073;国防科技大学航天与材料工程学院,湖南,长沙,410073;国防科技大学航天与材料工程学院,湖南,长沙,410073 |
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| 摘 要： | 采用WNND格式,对有泰氟隆烧蚀产物引射的化学非平衡NS方程进行了数值模拟。采用7组元纯空气化学反应和19组元、28种反应的空气—泰氟隆化学反应系统,对照计算了壁面有泰氟隆烧蚀产物引射和纯空气绕流两种流场,研究了泰氟隆烧蚀产物对电子密度的影响。
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| 关 键 词： | 烧蚀 化学非平衡 数值计算 |
| 文章编号： | 1001-2486(2004)06-0030-04 |
| 收稿时间： | 2004/3/28 0:00:00 |
| 修稿时间： | 2004年3月28日 |
The Effect of Wall Injection of Teflon Ablating Material on Electron Number Density |
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| SHI Yuzhong,WANG Maoyan,YIN Le and CHEN Weifang.The Effect of Wall Injection of Teflon Ablating Material on Electron Number Density[J].Journal of National University of Defense Technology,2004,26(6):30-33. |
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| Authors: | SHI Yuzhong WANG Maoyan YIN Le and CHEN Weifang |
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| Institution: | College of Aerospace and Materials Engineering, National Univ. of Defense Technology, Changsha 410073, China;College of Aerospace and Materials Engineering, National Univ. of Defense Technology, Changsha 410073, China;College of Aerospace and Materials Engineering, National Univ. of Defense Technology, Changsha 410073, China;College of Aerospace and Materials Engineering, National Univ. of Defense Technology, Changsha 410073, China |
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| Abstract: | The chemical non-equilibrium flows over a teflon ablative wall are calculated numerically by solving NS equations with pure-air and teflon-air chemical reaction system. The overall teflon-air chemical system used consists of 19 species and 28 reactions. The effect of wall injection of teflon ablating material on electron number density are discussed. |
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| Keywords: | ablation chemical non-equilibrium numerical simulation |
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