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浮空器气体混充定高建模与仿真
引用本文:杨燕初,曹胜鸿,赵荣,祝榕辰,宋林.浮空器气体混充定高建模与仿真[J].国防科技大学学报,2023,45(6):196-204.
作者姓名:杨燕初  曹胜鸿  赵荣  祝榕辰  宋林
作者单位:北京航空航天大学 集成电路科学与工程学院, 北京 100191;中国电子科技集团公司第五十八研究所, 江苏 无锡 214072;北京航空航天大学 电子信息工程学院, 北京 100191
基金项目:国家自然科学基金资助项目(62001014,92164206)
摘    要:依据浮空器浮重平衡特性以及理想气体状态方程,探索了一种气体混充控制浮空器平飞高度的定高方式,并对浮空器气体混充定高技术进行了总体设计研究。考虑到热力学特性对于浮空器上升过程和平飞过程的重要性,结合工程热力学中混充气体的热物性能,以超压气球作为研究对象,分析球体上升和平飞过程中的热环境,并与动力学模型进行耦合。在此基础上,对混充气球上升及平飞过程进行力学仿真,得到气球上升过程中高度、速度、气体温度以及压强的变化,验证了浮空器混充定高技术的可行性,为后续浮空器飞行试验提供指导。

关 键 词:浮空器  气体混充  热力学  动力学  数值仿真
收稿时间:2022/3/14 0:00:00

Modeling and numerical simulation of constant-height flight by air-lifting gas mixing for aerostats
YANG Yanchu,CAO Shenghong,ZHAO Rong,ZHU Rongchen,SONG Lin.Modeling and numerical simulation of constant-height flight by air-lifting gas mixing for aerostats[J].Journal of National University of Defense Technology,2023,45(6):196-204.
Authors:YANG Yanchu  CAO Shenghong  ZHAO Rong  ZHU Rongchen  SONG Lin
Institution:School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China ;China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214072, China ;School of Electronic and Information Engineering, Beihang University, Beijing 100191, China
Abstract:The novel non-volatile MRAM(magnetic random access memory) has the advantages of fast read and write speed, long data retention time and low power consumption, which attracts wide attention from researchers. Its excellent anti-irradiation capabilities are explored in depth, and further applications in aerospace and other fields are expected. The industrial development, technological changes and applications of MRAM were reviewed, the mature MRAM products of recent years were listed, and the advantages and disadvantages of different generations of MRAM were analyzed. The radiation effects of MTJ(magnetic tunnel junction) and read/write circuit based CMOS(complementary metal oxide semiconductor) were discussed. The recent achievements in anti-radiative hardening design for MRAM were summarized. The development prospect of anti-irradiation MRAM in aerospace field and even nuclear energy field was prospected.
Keywords:magnetic random access memory  magnetic tunnel junction  irradiation  total ionizing dose  single event effect
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