| 温度对半导体激光器退化的影响 |
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| 引用本文： | 杨鹏,胡业荣,王贵山.温度对半导体激光器退化的影响[J].国防科技大学学报,2020,42(1):45-50. |
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| 作者姓名： | 杨鹏 胡业荣 王贵山 |
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| 作者单位： | 国防科技大学 智能科学学院 装备综合保障技术重点实验室, 湖南 长沙 410073,国防科技大学 智能科学学院 装备综合保障技术重点实验室, 湖南 长沙 410073,国防科技大学 智能科学学院 装备综合保障技术重点实验室, 湖南 长沙 410073 |
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| 基金项目： | 国家部委基金资助项目(9140C710201140C71003) |
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| 摘 要： | 采取等效电路模型仿真和加速退化试验相结合的方法研究温度对半导体激光器不同退化模式的影响规律。针对半导体激光器有源区退化和腔面退化进行分析,发现有源区退化会使半导体激光器阈值电流增大,而腔面退化会使半导体激光器斜率效率减小;进行了半导体激光器热特性建模与仿真,发现温度升高会使半导体激光器阈值电流增大;利用半导体激光器加速退化试验平台进行了半导体激光器加速退化试验。仿真与试验结果证明:温度升高会加剧半导体激光器腔面退化,而对有源区退化无显著影响。上述结论对进一步完善半导体激光器温度-退化仿真模型,研究温度对半导体激光器退化的作用机理和防护措施有积极作用。
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| 关 键 词： | 半导体激光器 退化模式 特征参数 等效电路模型 加速退化试验 |
| 收稿时间： | 2018/9/18 0:00:00 |
Impact of temperature on degradations of laser diode |
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| YANG Peng,HU Yerong,WANG Guishan.Impact of temperature on degradations of laser diode[J].Journal of National University of Defense Technology,2020,42(1):45-50. |
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| Authors: | YANG Peng HU Yerong WANG Guishan |
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| Institution: | Science and Technology on Integrated Logistics Support Laboratory, College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China,Science and Technology on Integrated Logistics Support Laboratory, College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China and Science and Technology on Integrated Logistics Support Laboratory, College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China |
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| Abstract: | The impact of temperature on laser diode degradations were studied by equivalent circuit model simulation and accelerated degradation experiment. Two degradation modes of laser diode were analyzed and concluded that the active region degradation will cause the threshold current to increase, and the cavity surface degradation will cause the slope efficiency to decrease. The thermal characteristics of laser diode were modeled and simulated, and were concluded that the threshold current increases with the temperature rise. The accelerated degradation experiments were carried out by a laser diode accelerated degradation experiment platform. The results of simulation and experiment showed that the increase of temperature will aggravate the cavity surface degradation, but has no significant effect on the active region degradation of laser diode. These conclusions will improve the laser diode temperature degradation simulation modelling. The current study is beneficial for the mechanism of temperature on laser diode degradation and protective measures. |
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| Keywords: | laser diode degradation mode characteristic parameter equivalent circuit model accelerated degradation test |
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