LDO稳压器敏感度建模与仿真技术研究

基于LDO稳压器在电磁干扰（EMI）下产生直流偏移失效的机理分析，展开敏感度建模与仿真方法研究。使用一款实验芯片，创新地引入片上电压传感器，用于测试EMI在LDO稳压器内部的传播特性。在敏感度建模中，建立等效电路模型，通过直流功能测试，Z参数阻抗特性测试验证模型的正确性，将该模型用于LDO稳压器的敏感度预测。在敏感度仿真过程中，通过分析关键子电路和不断增加寄生元件，仿真不同寄生因素对敏感度影响的权重。将仿真结果与传导直接注入法（DPI）片上测试结果对比，仿真结果与DPI测试在频域1MHz至1GHz匹配。

Research on LDO regulator immunity modeling and simulation technology

Based on the LDO regulator DC offset failure mechanism under electromagnetic interference (EMI) study, the immunity modeling and simulation methods are proposed. A test chip is designed with novel on-chip voltage sensor which is implemented to test the EMI propagation inner LDO regulator. In the immunity modeling process, an equivalent circuit model dedicated to susceptibility prediction is built and validated by DC functional and Z parameter impedance measurements. And in the simulation flow, the key sub-circuits and parasitic elements are analyzed to reveal the weight contributions on immunity issues in frequency domain. The DPI measurement results show a good fit with prediction from the model up to 1 GHz.