用于SiC光学材料高效加工的电弧增强等离子体加工方法*

由于SiC光学材料具有高化学稳定性,使其在普通的等离子体加工中难以获得较高的加工效率。在等离子体加工实验中,我们发现提高等离子体的自身射频电压,可增强等离子体与SiC材料之间的电弧放电作用,而借助电弧的增强作用提高SiC材料的加工效率,因此本文提出了电弧增强等离子体加工方法。为研究电弧的形成原理,本文使用自制的探针分别测量了普通电感耦合等离子体和电弧增强等离子体的电压。并分别使用传统方法和电弧增强方法对S-SiC进行直线扫描加工实验,证明了电弧增强等离子加工方法在加工过程中具有更高的加工效率。

Arc-enhanced plasma machining of silicon carbide

Because the chemical stability of silicon carbide is extremely high, there is a low efficiency of SiC mirrors for conventional inductively coupled plasma (ICP) processing method, compared to the processing of other optical materials. Arc-enhanced plasma (AEP) machining is developed, enhancing the electricity arc formed between the ICP and SiC, which increases the material removal rate of the processing of SiC. The radio-frequency (rf) voltage measurements of ICP and AEP show that high rf voltage is significant for arcing. Linear trenches etched on the sintered silicon carbide (S-SiC) demonstrate the higher process efficiency of AEPM.