| 热处理对掺杂WO3的ITO薄膜性能的影响 |
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| 引用本文： | 李竹影,刘冶,刘辉.热处理对掺杂WO3的ITO薄膜性能的影响[J].海军工程大学学报,2011(4):43-47. |
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| 作者姓名： | 李竹影 刘冶 刘辉 |
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| 作者单位： | 海军工程大学理学院; |
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| 摘 要： | 用磁控溅射镀膜方法,制备掺杂WO3的ITO(xWO3-ITO)薄膜,经过热处理后对掺杂薄膜的表面形貌、吸收和透射光谱、面电阻等性能进行了测试.结果表明:适当的热处理能够提高xWO3-ITO薄膜在可见光范围内的透过率和在波长为228 nm处的吸光度.同时,该薄膜热处理后的方块电阻明显降低,导电性能得到明显提高.
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| 关 键 词： | 热处理 ITO薄膜 WO3 |
Influence of annealing on photoelectric property of WO_3-doped ITO thin film |
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| LI Zhu-ying,LIU Ye,LIU Hui.Influence of annealing on photoelectric property of WO_3-doped ITO thin film[J].Journal of Naval University of Engineering,2011(4):43-47. |
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| Authors: | LI Zhu-ying LIU Ye LIU Hui |
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| Institution: | LI Zhu-ying,LIU Ye,LIU Hui(College of Science,Naval Univ.of Engineering,Wuhan 430033,China) |
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| Abstract: | The preparation of WO3-doped ITO(xWO3-ITO) thin film was made by magnetron sputtering.After annealing,the properties of the doped thin films were tested such as surface morphology,absorption and transmittance spectrum and conductivity.The results show that the proper annealing can improve the transmittance of the xWO3-ITO thin films in the visible range and the absorption of the films in the wavelength of 228 nm and that through annealing,the sheet resistance of the films decreases obviously while the elect... |
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| Keywords: | annealing ITO thin film WO3 |
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