| 锰硅化合物Mn4Si7能带结构的研究 |
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| 引用本文： | 张民,季诚响,韩荣生,王志敏.锰硅化合物Mn4Si7能带结构的研究[J].装甲兵工程学院学报,2006,20(3):84-89. |
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| 作者姓名： | 张民 季诚响 韩荣生 王志敏 |
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| 作者单位： | 1. 装甲兵工程学院基础部,北京,100072
2. 北京大学物理学院,北京,100871 |
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| 摘 要： | MnSi1.7在光电子器件领域有广泛的应用前景.由于化合物结构的复杂,对MnSi1.7能带结构的研究仅限于实验上,而且不同实验测量的能隙值不同.首次利用"第一性原理",对MnSi1.7(Mn4Si7相)的电子特性进行了理论计算.计算结果表明,MnSi17(Mn4Si7)具有0.83 eV的直接能隙,这预示了MnSi1.7在光电上有着重要的应用前景.
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| 关 键 词： | 锰硅半导体 能带 电子结构 能隙 |
| 文章编号： | 1672-1497(2006)03-0084-06 |
| 修稿时间： | 2006年3月28日 |
Electronic Structure of Semiconductor Mn4Si7 |
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| ZHANG Min,JI Cheng-xiang,HAN Rong-sheng,WANG Zhi-min.Electronic Structure of Semiconductor Mn4Si7[J].Journal of Armored Force Engineering Institute,2006,20(3):84-89. |
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| Authors: | ZHANG Min JI Cheng-xiang HAN Rong-sheng WANG Zhi-min |
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| Abstract: | MnSi1.7 has attracted great interests for its potential application on photoelectric devices. There are only experimental studies due to the complex structure formation of MnSi1.7, which showed different band gap values. In this work, the electronic properties of Mn4Si7, which is one phase of MnS1.7, has been calculated by using first principles for the first time. The band structure calculation suggests that Mn4Si7 has a direct band gap of 0. 82 eV, which proves that it has important application potentials in the photoelectric fields. |
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| Keywords: | MnSi semiconductor energy band electronic structure band gap |
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