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脉冲偏压离子镀的研究现状
引用本文:张平,杜军,田飞,蔡志海.脉冲偏压离子镀的研究现状[J].装甲兵工程学院学报,2009,23(2):71-75.
作者姓名:张平  杜军  田飞  蔡志海
作者单位:装甲兵工程学院,装备再制造技术国防科技重点实验室,北京,100072
摘    要:脉冲偏压电弧离子镀的成膜过程远离热力学平衡态,与直流偏压电弧离子镀相比,具有成膜温度低、薄膜质量好和应力低等优点。从大颗粒净化作用、低温沉积、沉积速率、微观组织结构、内应力与结合强度、硬度等方面,综述了近年来脉冲偏压对薄膜性能影响的研究结果,重点讨论了机理方面的新成果,综述了脉冲偏压电源的研究状况,并对脉冲偏压电弧离子镀技术的应用前景进行了展望。

关 键 词:脉冲偏压  电弧离子镀  热力学平衡态

Research Status Quo of Pulsed Bias Arc Ion Plating
ZHANG Ping,DU Jun,TIAN Fei,CAI Zhi-hai.Research Status Quo of Pulsed Bias Arc Ion Plating[J].Journal of Armored Force Engineering Institute,2009,23(2):71-75.
Authors:ZHANG Ping  DU Jun  TIAN Fei  CAI Zhi-hai
Institution:(National Defense Key Laboratory for Remanufacturing Technology, Academy of Armored Force Engineering, Beijing 100072, China)
Abstract:The process of Plused Bias Arc Ion Plating (PBAIP) is far away from thermodynamic equilibrium state and has the advantages of higher interface bonding strength, lower substrate temperature, and lower residual stress etc. than conventional DC bias Arc Ion Plating (AIP). The basic features of the effect of PBAIP on the performance of coating are discussed and the application prospect of pulsed bias arc ion plating power supply is explored at the same time.
Keywords:pulsed bias  arc ion plating  thermodynamic equilibrium state
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