首页 | 本学科首页   官方微博 | 高级检索  
     

一种带过流保护的MOSFET管驱动电路
引用本文:魏曙光,马晓军,颜南明. 一种带过流保护的MOSFET管驱动电路[J]. 装甲兵工程学院学报, 2001, 15(1): 64-67
作者姓名:魏曙光  马晓军  颜南明
作者单位:装甲兵工程学院控制工程系北京 100072
摘    要:提出了适合MOSFET管的一种驱动与保护电路,电路利用高频磁隔离耦合技术,驱动信号响应快,且具有过流保护功能.对该电路进行了详细分析,给出了参数设计原则,并通过MATLAB仿真和实验测试,证明了其正确性和可行性.

关 键 词:MOSFET驱动与保护过流仿真
修稿时间:2000-10-10

A Driving Circuit with Over Current Protection for MOSFET
WEI Shu-guang, MA Xiao-jun, YAN Nan-ming. A Driving Circuit with Over Current Protection for MOSFET[J]. Journal of Armored Force Engineering Institute, 2001, 15(1): 64-67
Authors:WEI Shu-guang   MA Xiao-jun   YAN Nan-ming
Affiliation:WEI Shu-guang; MA Xiao-jun; YAN Nan-ming
Abstract:In this paper, proposes a driving and protecting circuit for MOSFET. With the using of isolated magnetic coupling in high frequency, the driving signal responses rapidly and protects sensitively. The detailed analysis of the circuit and the design principle of parameters are given. The MATLAB simulations and the experiment results proved the feasibility of the circuit.
Keywords:MOSFET drive and protect over current simulation  
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号