集成电路方波脉冲注入损伤效应实验研究

为了得到各损伤参数随脉宽的变化规律,寻找建立评价复杂EMP波形对集成电路损伤模型的依据,对2种典型的集成电路器件进行了方波脉冲注入损伤实验。结果表明:RAM6264损伤电压、电流及功率均随脉宽增大而减小,损伤能量处于某一小范围之内,可能属于能量损伤型器件;BG305损伤电压、功率随脉宽增大而减小,损伤能量随脉宽增大而增大,损伤电流处于某一个小范围之内,可能属于电流损伤型器件。

Damage Effects of Integrated Circuits Injected by Square Wave Pulse

A test is designed to get the damage parameters of two selected integrated circuit devices injected by square wave pulse with different pulse width varying with the square wave pulse width in order to develop the model which may be used to evaluate the damage effects caused by complex EMP.Some conclusions are obtained:the damage voltage and power and current of RAM6264 will decrease with the pulse width increases,the damage energy varies in a small range,it may be an energy damage device.The damage voltage and power of BG305 have the same rules as RAM6264,while the damage energy will increase.And the damage current also varies in a small range,it may be a current damage device.