| 静电放电对电子装置的危害机理分析与模型研究 |
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| 引用本文： | 谭志良. 静电放电对电子装置的危害机理分析与模型研究[J]. 军械工程学院学报, 1994, 0(4) |
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| 作者姓名： | 谭志良 |
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| 作者单位： | 静电技术研究所 |
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| 摘 要： | 本文介绍了静电放电(ESD)对电子装置的危害,分析了半导体器件受ESD影响而失效的机理,及ESD对电子设备形成干扰的途径,介绍并分析了六种ESD模型,即人体模型(HBM)、带电装置模型(CDM)、场感应模型(FIM)、机器模型(MM)、增强型场模型(FEM)或金属体模型(BMM)、电容耦合模型(CCM)。
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| 关 键 词： | 静电放电 危害 机理 模型 |
ANALYSIS OF HAZARDS FROM ESD, ESD DAMAGE MECHANISM TO ELECTRONIC DEVICES AND STUDY OF ESD MODELS |
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| Tan Zhiliang. ANALYSIS OF HAZARDS FROM ESD, ESD DAMAGE MECHANISM TO ELECTRONIC DEVICES AND STUDY OF ESD MODELS[J]. Journal of Ordnance Engineering College, 1994, 0(4) |
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| Authors: | Tan Zhiliang |
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| Affiliation: | Electrostatics Research Institute |
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| Abstract: | In this paper, phenomena and hazards to electronic devices from ESD (Electrostatic Discharge) are introduced. Damage mechanism of semiconductor devisees and interberence ways to electronic equipment from ESD arc analysed. Finally, six kinds of ESD models such as HBM (Human body Model) CDM (Charged-Device Model),FIM(Field-Induced Model), MM (Machine Model), FEM (Field -Enhanced Model) or BMM (Body -Metallic Model), CCM (Capacitive- Coupled Model ) etc, arc introduced |
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| Keywords: | ESD hazard mechanism model |
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