| 掺镍氧化钨钼薄膜的阻抗特性 |
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| 引用本文： | 李竹影,章铭亮,罗珊. 掺镍氧化钨钼薄膜的阻抗特性[J]. 海军工程大学学报, 2009, 21(2) |
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| 作者姓名： | 李竹影 章铭亮 罗珊 |
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| 作者单位： | 海军工程大学,理学院,武汉,430033;通信指挥学院,基础部,武汉,430010 |
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| 摘 要： | 用溶胶凝胶的方法在ITO导电基片上制备了一组不同掺镍量的氧化钨钼薄膜,分别测量了该系统及ITO电极浸泡于1 mol氯化钠溶液中不同频率下的电化学阻抗,应用等效电路法模拟了该系统的阻抗谱,从而获得了有关掺镍薄膜的电阻、电容及溶液在薄膜内扩散等信息.研究表明,与ITO电极所产生的吸附层的等效元件参数相比较,掺镍氧化钨钼薄膜大大提高了ITO电极传输电荷的能力.
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| 关 键 词： | 掺杂镍 氧化钨钼薄膜 阻抗特性 |
Impendance characteristics of Ni doped WO_3-MoO_3 films |
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| LI Zhu-ying,ZHANG Ming-liang,LUO Shan. Impendance characteristics of Ni doped WO_3-MoO_3 films[J]. Journal of Naval University of Engineering, 2009, 21(2) |
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| Authors: | LI Zhu-ying ZHANG Ming-liang LUO Shan |
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| Affiliation: | 1.College of Science;Naval Univ.of Engineering;Wuhan 430033;China;2.Dept.of Basic Courses;Commanding Communications Academy;Wuhan 430010;China |
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| Abstract: | The Ni doped WO3-MoO3 films were prepared by the sol-gel process.The electrochemistry impedance spectroscopies of ITO plane electrodes and ITO plane electrodes with Ni doped WO3-MoO3 thin film immersed in 1 mol NaCl electrolyte were studied by means of the equivalent circuits.The characteristics of the constant phase angle elements,the capacitance and resistance and solution diffusion resistance in Ni doped WO3-MoO3 thin films were gained.The results show that the effect of adsorption layer on ITO electrode... |
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| Keywords: | Ni doped WO3-MoO3 thin film impedance characteristics |
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