室温下单电子晶体管3种临界尺寸的确定

为使单电子晶体管达到实际应用的地步,开展室温条件下相关研究成为必然。从正统理论出发,推导、计算出室温条件下单电子晶体管能否正常工作的库仑岛临界尺寸:存储器件为6.5nm,逻辑器件为1.5nm;本文还推导和计算出单电子晶体管室温下发生能量量子化效应的临界尺寸:4.7nm,并对这3种临界尺寸进行了验证和分析。另外,通过比较分析本文还得出了室温条件下,所有逻辑器件均必须考虑能量量子化效应,所有存储器件应尽量考虑能量量子化效应的结论。分析结果表明,库仑岛临界尺寸的确定对单电子晶体管的实际应用具有重要意义。

Determination for three kinds of critical size of single-electron transistor at room temperature

For single-electron transistor (SET) to the point of practical application, its research become inevitable at room temperature. This paper derives from the orthodox theory and calculates the critical size of coulomb island of SET which can work normally at room temperature: the memory device is 6.5nm, the logic device is 1.5nm; this article also calculates the critical size of coulomb island of SET when it appears the energy quantization effect at room temperature: 4.7nm, and verifies and analyzes these two kinds of critical size. In addition, through a comparative analysis, it also obtains a conclusion that all logical devices must consider the energy quantization effect and all memory devices should consider the energy quantization effect at room temperature. The analysis result shows that determination for critical size of coulomb island has important significance for the application of SET.