首页 | 本学科首页   官方微博 | 高级检索  
     

LaB6空心阴极中毒特性研究
引用本文:杨威,张天平,龙建飞,郭宁,刘明正,谷增杰. LaB6空心阴极中毒特性研究[J]. 国防科技大学学报, 2020, 42(4)
作者姓名:杨威  张天平  龙建飞  郭宁  刘明正  谷增杰
作者单位:兰州空间技术物理研究所真空技术与物理重点实验室,兰州空间技术物理研究所真空技术与物理重点实验室,国防科技大学空天科学学院,南华大学,兰州空间技术物理研究所真空技术与物理重点实验室,兰州空间技术物理研究所真空技术与物理重点实验室,兰州空间技术物理研究所真空技术与物理重点实验室
基金项目:军用电子元器件支撑项目(1607XM0004),国家自然科学基金资助项目
摘    要:LaB6阴极与其他类型阴极相比具有电子发射电流密度大等优点,已广泛用于电推进、高发射密度电子枪等产品。为了研究LaB6空心阴极中毒特性,识别LaB6空心阴极主要失效模式,分别对LaB6空心阴极暴露大气后性能变化特征和引起性能变化的原因进行了研究。结果表明:LaB6空心阴极在暴露大气后表面吸附大量中毒气体,出现了发射体表面逸出功增加,发射体出现短期中毒现象。此时空心阴极的放电电压和阴极顶温度均有所上升,经过短期工作后放电电压和阴极顶温度均恢复初始状态。但LaB6空心阴极严重中毒后,并且不能通过加热和离子轰击方式去除表面生成的氧化物。因此,可以在实验过程中通过监测空心阴极的阴极顶温度和阳极电压变化间接表征空心阴极发射体状态。

关 键 词:LaB6空心阴极;寿命实验;氧中毒;阴极顶温度
收稿时间:2019-01-11
修稿时间:2019-03-08

Study on Poisoning Characteristics of LaB6 Hollow Cathode
Abstract:Compared with other cathodes, LaB6 cathode has the advantages of high electron emission current density, and has been widely used in electric propulsion, high emission density electron gun and other products. The poisoning characteristics of LaB6 hollow cathode were analyzed based on the analysis results of the components of emitter, plate of hollow cathode and cathode tube after poisoning during the life test of LaB6 hollow cathode. The results show that the LaB6 hollow cathode adsorbs a lot of poisonous gases on the surface of the emitter during exposure to the atmosphere, and the work function from the emitter surface increases, and the emitter appears short-term poisoning phenomenon. The discharge voltage and plate of hollow cathode temperature are increased, and the discharge voltage and cathode top temperature are restored to the initial state after short-term operation. However, serious poisoning of LaB6 hollow cathode, the oxide generated on the surface can not be removed by heating and ion bombardment. Therefore, the emitter state of hollow cathode can be indirectly characterized by monitoring the change of cathode temperature and anode voltage during the test.
Keywords:
点击此处可从《国防科技大学学报》浏览原始摘要信息
点击此处可从《国防科技大学学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号