溶胶凝胶法制备碳化硅陶瓷的影响因素

采用溶胶凝胶法 ,以正硅酸乙酯和酚醛树脂为原料 ,在草酸催化作用下 ,制备出了不含硫和氯的均相碳化硅先驱体 ,并在一定的升温制度下制备出SiC陶瓷。考察了温度对预水解过程的影响以及水用量、催化剂和镍盐用量等因素对凝胶时间的影响。结果表明 ,在预水解温度控制在 4 0℃左右 ,时间为 2 4h时效果最佳 ;而当水与正硅酸乙酯的摩尔比达到 0 2 8左右、草酸与正硅酸乙酯的摩尔比为 0 0 1左右时 ,可以使凝胶时间达到最短。进一步的研究表明 ,镍盐的加入对凝胶烧成过程中 β -SiC的生成有催化作用。     

用B4C陶瓷先驱体涂复碳纤维研究

用溴苯和BF3乙醚为起始原料,合成出聚对亚苯基硼(PPB),高温裂解后得到含B4C 54.4%、B2O2 13.6%、自由碳32%的陶瓷.用溶液浸涂碳纤维(CF)并高温裂解后得到B4C涂层CF,与未涂层CF相比,B4C涂层CF抗热氧化性提高200°C.1800°C热压时B4C涂层CF较未涂层CF制得的CF/SiC复合材料的σb值提高10.5% ,KIC值提高19.4%,1850°C热压时相应的σb值提高31.6%,KIC提高5.8%.     

Si-N-C 陶瓷的组成、结构与其热稳定性…

本文研究了由聚硅氮烷(PSZ)和聚碳硅烷(PC)热解制得的三种陶瓷的组成、结构与特性。研究表明,PC热解到1250℃产生Si-C陶瓷,其结晶相是β-SiC微晶,PSZ在N_2或NH_3气氛中热解则分别产生Si-N-C与Si-N无定形陶瓷。这三种陶瓷在Ar_2气中1300℃到1500℃处理以研究其热稳定性。结果证明Si-c陶瓷从微晶变为β-SiC结晶态,Si-N陶瓷从无定形态变为α-Si_3N_4结晶并伴随着可观测到的重量损失而Si-N-C陶瓷维持其元素组成及β-SiC微晶态直到1500℃。     

中碳钢碳化物相位的应变诱发快速球化

中碳钢中的片状共析碳化物,可在A_(c1)点之下较高的温度进行适量的变形即可在形变过程中实现球化;停止变形后继续在变形温度停留1～2小时,可使碳化物球通过奥斯瓦尔德熟化达到尺寸均匀化和粗化,同时使铁素体基体完成再结晶。     

连续碳化硅纤维热交联工艺研究

采用热交联工艺改进传统的空气不熔化工艺,在尽可能少引入氧的情况下实现聚碳硅烷纤维的不熔化处理,降低连续SiC纤维中的氧含量。通过IR、元素分析、SEM、XRD等手段系统研究了热交联工艺条件对纤维氧含量、结构、性能的影响。     

先驱体转化致密碳化硅纳米复合材料的制备及其热电性能

以聚碳硅烷和锑改性聚硅烷为先驱体,利用先驱体转化Si C材料的富余自由碳高温石墨化的微观结构演变特点,采用热压烧结、先驱体浸渍-裂解法以及退火工艺制备出先驱体转化Si C纳米复合材料。采用SEM、TEM、XRD和Raman等测试手段表征和分析了相组成和微观结构,讨论了样品的热导率、电导率和塞贝克系数等热电参数随温度变化关系。研究表明,所得致密Si C纳米复合材料为n型热电材料。由于纳米石墨的作用,材料热导率抑制在4~8W/(m·K)范围。1600℃退火处理能够降低热导率,同时提高电导率和塞贝克系数绝对值,使先驱体转化法得到的Si C纳米复合材料无量纲热电优值ZT达到0.0028(650℃),高于其他已报道的致密Si C/C复合材料和纳米复合材料体系。     

碳化硼表面金属化初步研究

为了降低碳化硼(B,C)与金属钎焊连接的温度,采用真空熔结Al基钎料的方法,在1000℃时对其进行了表面金属化处理,SEM和EDAX观察分析B4C与钎料结合断面的形貌和元素面分布,发现B4C与钎料界面发生了互扩散,界面结合致密,形成冶金结合.     

Combustion of B4C/KNO3 binary pyrotechnic system

Presented herein is an experimental study on the combustion of B4C/KNO3 binary pyrotechnic system.Combustion products were tested using X-ray diffraction(XRD),scanning electron microscopy(SEM),and energy dispersive spectrometer(EDS).According to the results of tests and CEA calculation,the combustion reaction equation was established.The flames and burning rates were recorded by a high speed camera and a spectrophotometer.The effect of B4C particle size on the thermal sensitivity of B4C/KNO3 was investigated by differential scanning calorimetry(DSC)techniques.In addition,a reliable method for calculating the flame temperature was proposed.Based on the results of experiments,the combustion reaction mechanism was briefly analyzed.The burning rate,flame temperature and thermal sensitivity of B4C/KNC3 increase with the decrease of B4C particle size.The mass ratio of B4C/KNO3 has a great effect on combustion properties.Oxidizer-rich compositions have low flame temperatures,low burning rates,and provide green light emission.The combustion reactions of fuel-rich compositions are vigorous,and the B4C/KNO3 with mass ratio of 25:75 has the highest burning rate and the highest flame temperature.     

Microstructural characterization of silicon carbide reinforced dissimilar grade aluminium explosive clads

Aluminium composites are inevitable in ship building, commercial and defence aircrafts construction due to their light weight, high strength to weight ratio, admirable properties and cost affordability. In this study, the microstructural characteristics of explosive cladded dissimilar grade aluminium (Al 1100-A1 5052) clad composites reinforced with silicon carbide (SiC) particles is presented. Microstructure taken at the interface by optical and scanning electron microscopes (SEM) revealed the formation of a silicon carbide layer between the dissimilar grade aluminium sheets. Though reaction layers were witnessed at few locations along the interface, the diffusion of atoms between the participant metals is not visible as confirmed by energy dispersive spectroscopy, elemental mapping, line analysis and X-ray diffraction (XRD). The variation in microhardness at various regions of the silicon carbide reinforced dissimilar aluminium explosive clad is reported. The increase in tensile strength of the SiC laced clad is also presented.     

化学气相沉积碳化硅超光滑抛光机理与表面粗糙度影响因素

为实现化学气相沉积碳化硅(CVD SiC)的超光滑抛光,采用纳米划痕试验研究了化学气相沉积碳化硅脆塑转变的临界载荷,根据单颗磨粒受力对其抛光机理进行了分析,并从材料特性、工艺参数以及抛光液pH值三个方面对其表面粗糙度影响因素进行了系统的试验研究.研究结果表明:化学气相沉积碳化硅的稳定抛光过程是磨粒对碳化硅表面的塑性域划痕过程;CVD SiC的晶粒不均匀与表面高点会降低晟终所能达到的表面质量;表面粗糙度在一定范围内随磨粒粒度增加呈近似线性增长,随抛光模硬度的增加而增长;抛光压强对表面粗糙度的影响规律与抛光模的变形行为相关,当抛光模处于弹性或弹塑性变形阶段时,表面粗糙度随抛光压强的增加呈小幅增长,而当抛光模包含塑性变形之后,表面粗糙度基本与抛光压强无关;此外,抛光速度和抛光液pH值对表面粗糙度的影响不大.研究结论为CVD SiC超光滑抛光的工艺参数优化选择提供了定量的试验依据.