气动伺服控制系统的自适应模糊控制器的研究

介绍了一种新型的自适应fuzzy PD控制器 ,并研究了它在气动伺服位置控制系统中应用的适应性问题和非线性摩擦力的补偿方法 ,提出了一种新的模糊逻辑控制补偿算法 .它通过一个自适应模型参数Ma的调整控制 ,提高了气动伺服系统的控制精度 .试验结果表明 :与传统的控制方法相比较 ,自适应fuzzy PD控制器具有动态性能好、自适应能力强和位置控制精度高等优点 .     

Novel approach for active vibration control of a flexible missile

This paper investigates the feasibility of using an active dynamic vibration absorber (ADVA) for active vibration control of a flexible missile system through simulation. Based on the principles of a dynamic vibration absorber (DVA), a ring-type ADVA is first designed to attenuate the elastic vibration of the flexible missile, and the design of the active controller adopts the proportional-integral-derivative (PID) control algorithm. The motion equations of a flexible missile with an ADVA, which is subjected to follower thrust at its aft end, are derived using the Lagrangian approach. Taking the minimum of the root mean square (RMS) of the lateral displacement response of the center of mass as the objective function, a genetic algorithm (GA) is used to optimize the parameter of the DVA and PID controller. The numerical calculations show that the ADVA and DVA are effective in suppressing the vibration and provide approximately 41.2% and 17.6% improvement, respectively, compared with the case of no DVA. The ADVA has better performance than the DVA. When the missile is subjected to follower thrust, the effect of vibration reduction is more effective than the case without follower thrust. It is feasible to reduce vibration and improve the stability of flexible missiles by means of the ADVA.     

SATA硬盘控制器的FPGA实现

设计一款高性能的SATA硬盘控制器IP核。基于Xilinx公司的Virtex-5系列FPGA,参考SATA2.5协议,运用VHDL硬件描述语言,采用模块化的设计理念,完成IP核的设计。搭建了验证平台,对IP核的性能进行了测试,经测试该控制器IP核能正确地完成读、写、设备复位、设备识别等操作,且稳定性良好。同时编写了Peta Linux操作系统下的驱动程序,便于嵌入式系统的应用。     

130 nm加固SOI工艺的抗辐射控制芯片设计

针对航天电子系统控制模块对集成电路的抗辐射需求,在130 nm部分耗尽绝缘体上硅(Silicon-On-Insulator,SOI)工艺平台上设计了一款基于比例、积分、微分控制算法的控制芯片,并分别从晶圆材料、制备工艺、版图设计的角度对芯片进行了总剂量辐射加固。流片测试结果表明,芯片的调节精度达到了5×10~(-12),与进口抗辐射现场可编程门阵列水平相当;在长时间频率稳定度方面,芯片优于国外抗辐射现场可编程门阵列。对芯片进行的模拟辐照试验表明,芯片在300 krad(Si)的总剂量辐照条件下依然可以正常工作。